unisonic technologies co., ltd utm2054 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2008 unisonic technologies co., ltd qw-r502-289.a n-channel enhancement mode ? description the utm2054 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 35m ? @v gs =10v * r ds(on) = 45m ? @v gs =4.5v * r ds(on) = 110m ? @v gs =2.5v * ultra low gate charge ( typical 11.5 nc ) * low reverse transfer capacitance ( c rss = typical 60 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain lead-free: utm2054l halogen-free: utm2054g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing utm2054-ab3-r utm2054l-ab3-r UTM2054G-AB3-R sot-89 g d s tape reel
utm2054 preliminary power mosfet unisonic technologies co., ltd 2 of 2 www.unisonic.com.tw qw-r502-289.a ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 20 v gate-source voltage v gss 16 v continuous i d 5 drain current (v gs =10v) pulsed i dm 20 a diode continuous forward current i s 3 a power dissipation p d 1.47 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. note: absolute maximum ratings are stre ss ratings only and functional device operation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 20 v drain-source leakage current i dss v ds =16v, v gs =0v 1 a gate-source leakage current i gss v ds =0v, v gs =16v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 0.6 0.9 1.5 v v gs =10v, i ds =5a 35 40 v gs =4.5v, i ds =3.5a 45 54 static drain-source on-state resistance (note) r ds(on) v gs =2.5v, i ds =2.5a 110 130 m ? dynamic characteristics input capacitance c iss 450 pf output capacitance c oss 100 pf reverse transfer capacitance c rss v ds =15v, v gs =0v, f=1.0mhz 60 pf gate resistance r g v gs =0v, v ds =0v, f=1mhz 2.5 ? switching characteristics turn-on delay time t d(on) 7 10 ns turn-on rise time t r 15 25 ns turn-off delay time t d(off) 19 26 ns turn-off fall time t f v dd =10v, r l =10 ? , i ds =1a, v gen =4.5v, r g =6 ? 6 7 ns total gate charge q g 11.5 15 nc gate-source charge q gs 3.8 nc gate-drain charge q dd v ds =10v, v gs =4.5v, i ds =5 a 5.2 nc source- drain diode ratings and characteristics diode forward voltage (note) v sd i sd =3a, v gs =0v 0.7 1.3 v note: pulse width Q 300 s, duty cycle Q 2% utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
